Structured Design Methods for MEMS
Engineering Design Research Laboratory
Department of Mechanical Engineering
California Institute of Technology
Mail Code: 104-44
1200 East California Blvd.
Pasadena, CA, 91125, U.S.A.
Research Overview:
In the past, the design of Micro-Electrical-Mechanical-Systems has been almost entirely trial and error,
although MEMS structures have been fabricated for many years.
Because of the complex relationship between mask shape and processed MEMS
shape, several design and fabrication iterations are often required to refine
a preliminary mask-layout. Designers with extensive MEMS fabrication
experience can reduce the number of mask design iterations because they
possess a detailed intuitive model of the etching process. However, a
major goal of this work is to develop automated tools which can both reduce
the number of iterations that are necessary for experienced designers, and
allow designers who are not specialists in the art of MEMS fabrication to
develop reasonably sophisticated designs with a small number of iterations.
Furthermore, such automated tools will ultimately result in designs that are
more robust with respect to process variations, and are thus most suited
to large scale and low cost manufacturing.
- A paper describing the SEGS simulation method:
"Design of MEMS via Efficient Simulation of Fabrication"
Ted J. Hubbard and Erik K. Antonsson
Proceedings of the
ASME Design for Manufacturing Conference,
Irvine, CA, August 18-22, 1996.
- An abstract of this paper in:
- A copy of this paper in:
- Caltech On-line isotropic/anisotropic
SEGS: Etch Simulator.
- Technical University of Nova Scotia (TUNS) On-line isotropic/anisotropic
SEGS: Etch Simulator.
-
Papers and abstracts available on line
- PostScript
photo gallery available on line
- Information pages for the
people that work in this area
- A Foldable Paper Structure showing Crystal Planes:
- A Chart of the Mechanical Properties of Silicon:
- A page reproduced from
Jarlath McEntee's MEMS Links
discussing the Material Properties of
Silicon.
This material is based upon work supported, in part, by
the National Science Foundation under
NSF Grant Numbers ECS-9023646 and MIPS-9529675.
Any opinions, findings, conclusions, or recommendations
expressed in this publication are those of the authors and
do not necessarily reflect the views of the sponsor(s).
Last updated
Tue Jul 11 09:52:37 PDT 2000
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